Development of High-Aspect Ratio Passive MEMS Inertial Switch Based on Electrochemical Deposition Technique

DU Liqun; TAO Yousheng; LI Yuanqi; QI Leijie

doi:10.16080/j.issn1671-833x.2017.14.024

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Development of High-Aspect Ratio Passive MEMS Inertial Switch Based on Electrochemical Deposition Technique

更新时间：2026-04-17

- Development of High-Aspect Ratio Passive MEMS Inertial Switch Based on Electrochemical Deposition Technique
- Aeronautical Manufacturing Technology Vol. 60, Issue 14, Pages: 24-29(2017)
- 作者机构：
  
  1. 大连理工大学精密与特种加工教育部重点实验室,大连,116024
  2. 大连理工大学辽宁省微纳米及系统重点实验室,大连,116024
- 作者简介：
- 基金信息：
- DOI：10.16080/j.issn1671-833x.2017.14.024
  CLC：
- Published：2017
- 稿件说明：
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杜立群1,2，陶友胜1，李爰琪2，齐磊杰1. 基于电化学沉积的高深宽比无源MEMS惯性开关的研制*[J]. 航空制造技术, 2017, 60(14): 24-29.

DU Liqun1,2, TAO Yousheng1, LI Yuanqi2, QI Leijie1. Development of High-Aspect Ratio Passive MEMS Inertial Switch Based on Electrochemical Deposition Technique. Aeronautical Manufacturing Technology, 2017, 60(14): 24-29.
杜立群1,2，陶友胜1，李爰琪2，齐磊杰1. 基于电化学沉积的高深宽比无源MEMS惯性开关的研制*[J]. 航空制造技术, 2017, 60(14): 24-29. DOI： 10.16080/j.issn1671-833x.2017.14.024.

DU Liqun1,2, TAO Yousheng1, LI Yuanqi2, QI Leijie1. Development of High-Aspect Ratio Passive MEMS Inertial Switch Based on Electrochemical Deposition Technique. Aeronautical Manufacturing Technology, 2017, 60(14): 24-29. DOI： 10.16080/j.issn1671-833x.2017.14.024.

摘要

基于电化学沉积技术在金属基底上制作了一种新型的无源MEMS 惯性开关。针对高深宽比、细线宽微电铸用光刻胶模具制作过程中，由于SU-8 胶膜严重侧蚀导致的胶膜制作困难、质量低下的问题，进行了紫外光刻试验研究。试验研究了不同曝光剂量和后烘时间对SU-8 胶光刻效果的影响，优化了光刻工艺参数。采用降低曝光剂量和延长后烘时间相结合的方法解决了高深宽比、细线宽SU-8 胶膜制作困难的问题，制作出高质量的微电铸用光刻胶模具。最后，在上述试验结果基础上制作了一种高深宽比、无源MEMS 惯性开关。其外形尺寸为 3935μm×3935μm×234μm，其中最细线宽12μm，单层最大深宽比达10∶1，多层最大深宽比达20∶1。

Abstract

Based on the electrochemical deposition technique

a new passive MEMS inertial switch was fabricated on a metal substrate. In view of the problems of poor quality caused by the serious lateral erosion of SU-8 in the process of making high-aspect ratio and fine-line micro electroforming molds

SU-8 UV lithography was studied. The effects of different exposure dose and PEB (post exposure bake) time on SU-8 UV lithography were studied experimentally

and the parameters of UV lithography were optimized. By using the method of reducing the exposure dose and prolonging the PEB time

the problem of poor quality of high-aspectratio and fine-line SU-8 electroforming mold was solved successfully. Finally

on the basis of the above experimental results

a passive MEMS inertial switch with high-aspect ratio was developed. The external dimensions are 3935μm×3935μm×234μm

of which the smallest line width is 12μm

the highest aspect ratio of the single layer is 10∶1

and the highest aspect ratio of the multi-layer is 20∶1.

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