Study on Lithography of High-Precision AZ Thick Photoresist and Its Application in Micro RF Coaxial Transmitter

DU Liqun; LI Yuanqi; QI Leijie; LI Xiaojun; ZHU Heqing; ZHAO Wen; RUAN Jiufu

doi:10.16080/j.issn1671-833x.2018.09.026

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Study on Lithography of High-Precision AZ Thick Photoresist and Its Application in Micro RF Coaxial Transmitter

更新时间：2025-10-30

- Study on Lithography of High-Precision AZ Thick Photoresist and Its Application in Micro RF Coaxial Transmitter
- Aeronautical Manufacturing Technology Vol. 61, Issue 9, Pages: 26-31(2018)
- 作者机构：
  
  1. 大连理工大学精密与特种加工教育部重点实验室,大连,116024
  2. 大连理工大学辽宁省微纳米及系统重点实验室,大连,116024
  3. 合肥工业大学光电技术研究院,合肥,230009
- 作者简介：
- 基金信息：
- DOI：10.16080/j.issn1671-833x.2018.09.026
  CLC：
- Published：2018
- 稿件说明：
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杜立群，李爰琪，齐磊杰，李晓军，朱和卿，赵雯，阮久福. 高精度AZ厚胶光刻及在微型射频同轴器制作中的应用[J]. 航空制造技术, 2018, 61(9): 26-31.

DU LiQun, LI Yuanqi, QI Leijie, LI Xiaojun, ZHU Heqing, ZHAO Wen, RUAN Jiufu. Study on Lithography of High-Precision AZ Thick Photoresist and Its Application in Micro RF Coaxial Transmitter[J]. Aeronautical Manufacturing Technology, 2018, 61(9): 26-31.
杜立群，李爰琪，齐磊杰，李晓军，朱和卿，赵雯，阮久福. 高精度AZ厚胶光刻及在微型射频同轴器制作中的应用[J]. 航空制造技术, 2018, 61(9): 26-31. DOI： 10.16080/j.issn1671-833x.2018.09.026.

DU LiQun, LI Yuanqi, QI Leijie, LI Xiaojun, ZHU Heqing, ZHAO Wen, RUAN Jiufu. Study on Lithography of High-Precision AZ Thick Photoresist and Its Application in Micro RF Coaxial Transmitter[J]. Aeronautical Manufacturing Technology, 2018, 61(9): 26-31. DOI： 10.16080/j.issn1671-833x.2018.09.026.

摘要

基于正负胶结合的UV-LIGA技术在金属基底上制作了一种新型无源微型射频同轴传输器。针对制作过程中由于胶膜内部曝光剂量分布不均匀导致的正性厚胶AZ50XT 光刻图形精度低的问题，在紫外光刻工艺的基础上，采用分次曝光显影的方法，制作了高尺寸精度的电铸胶膜。对不同尺寸的掩膜板图形进行分次曝光显影试验，研究了分次曝光显影法对光刻图形尺寸精度的影响。试验结果表明：分次曝光显影法可以显著提高AZ50XT胶膜图形化精度，并且光刻图形的精度与掩膜板图形尺寸无关。最后，基于上述试验成果，制作了整体尺寸为3000μm×400μm×200μm，单层最大厚度为60μm，侧壁倾角均大于85°的微型射频同轴传输器。

Abstract

Based on UV-LIGA technology

a novel passive RF coaxial transmitter was fabricated on a metal substrate by combining positive and negative photoresist. Aiming at low dimensional accuracy of thick positive photoresist AZ50XT caused by the uneven distribution of exposure dose within the resist

the method of multiple exposure and development was proposed to make high-precision electroforming mask. The effect of this method on dimensional accuracy was studied by lithography experiment of different size graphics. The experiment results show that the method of multiple exposure and development can significantly improve the dimensional accuracy of AZ50XT resist and the accuracy of the lithography pattern is no related to the mask size. Finally

based on the experiment results

a kind of passive coaxial transmitter was fabricated. The overall dimension is 3000μm×400μm×200μm

the maximum height of single layer is 60μm and the sidewall inclination of each layer is more than 85°.

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