Based on the electrochemical deposition technique

a new passive MEMS inertial switch was fabricated on a metal substrate. In view of the problems of poor quality caused by the serious lateral erosion of SU-8 in the process of making high-aspect ratio and fine-line micro electroforming molds

SU-8 UV lithography was studied. The effects of different exposure dose and PEB (post exposure bake) time on SU-8 UV lithography were studied experimentally

and the parameters of UV lithography were optimized. By using the method of reducing the exposure dose and prolonging the PEB time

the problem of poor quality of high-aspectratio and fine-line SU-8 electroforming mold was solved successfully. Finally

on the basis of the above experimental results

a passive MEMS inertial switch with high-aspect ratio was developed. The external dimensions are 3935μm×3935μm×234μm

of which the smallest line width is 12μm

the highest aspect ratio of the single layer is 10∶1

and the highest aspect ratio of the multi-layer is 20∶1.